TSD1760 low vcesat npn transistor 1 / 4 version: a09 to - 252 (dpak) product summary bv cbo 50v bv ceo 5 0v i c 3 a v ce(sat) 0.5 v @ i c / i b = 2a / 2 00ma features low v ce(sat) 0.25 @ i c / i b = 2a / 2 00ma (typ.) complementary part with tsb1184cp structure epitaxial planar type npn silicon transistor ordering information part no. package pack ing TSD1760 cp ro to - 252 2.5kpcs / 13 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit collector - base voltage v cbo 50 v collector - emitter voltage v ceo 5 0 v emitter - base voltage v ebo 5 v dc 3 collector current pulse i c 7 (note 1) a ta=25 c 1 (note 2) power dissipation tc=25 c p d 15 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: 1. single pulse, pw=10ms , duty 2% 2. pcb 1.7mm thick, collector copper plating 10mm x 10mm or larger. electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit collector - base breakdown voltage i c = 50ua, i e = 0 bv cbo 50 - - -- v collector - emitter breakdown voltage i c = 1 ma, i b = 0 bv ceo 5 0 -- -- v emitter - base breakdown voltage i e = 50ua, i c = 0 bv ebo 5 -- -- v collector cutoff current v cb = 3 0v, i e = 0 i cbo -- -- 1 ua emitter cutoff current v eb = 4 v, i c = 0 i ebo -- -- 1 ua collector - emitter saturation voltage i c / i b = 2 a / 2 00m a * v ce(sat) -- 0. 2 5 0.5 v dc current transfer ratio v ce = 2 v, i c = 1 00 ma * h fe 82 -- 560 transition frequency v ce = 5 v, i c =50m a, f=100mhz f t -- 9 0 -- mhz output capacitance v cb = 1 0v, f=1mhz cob -- 4 5 -- pf * pulse test: pulse width 380us, duty cycle 2% pin definition : 1. base 2. collector 3. emitter
TSD1760 low vcesat npn transistor 2 / 4 version: a09 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) figure 1. dc current gain figure 2. v ce(sat ) v.s. ic figure 3. v be(sat ) v.s. ic figure 4. power derating curv e
TSD1760 low vcesat npn transistor 3 / 4 version: a09 to - 252 mechanical drawing to - 2 52 di mension millimeters inches dim min max min max a 2.3bsc 0.09bsc a1 4.6bsc 0.18bsc b 6.80 7.20 0.268 0.283 c 5.40 5.60 0.213 0.220 d 6.40 6.65 0.252 0.262 e 2.20 2.40 0.087 0.094 f 0.00 0.20 0.000 0.008 g 5.20 5.40 0.205 0.213 g1 0.75 0.85 0.030 0.033 g2 0.55 0.65 0.022 0.026 h 0.35 0.65 0.014 0.026 i 0.90 1.50 0.035 0.059 j 2.20 2.80 0.087 0.110 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.67
TSD1760 low vcesat npn transistor 4 / 4 version: a09 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liabili ty for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and condi tions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability , or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applic ations do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
|
